中红外激光陶瓷的研究进展与展望

波段为2～5tμm的中红外激光在国防、医疗、通信等方面有着特殊的重要应用,而直接产生中红外激光的增益介质主要包括气体激光介质、半导体、稀土离子或者过渡金属离子掺杂的化合物.本文首先介绍应用于中红外波段的发光离子(包括Tm3,Ho3+,Er3+等稀土离子和Cr2+,Fe2等过渡金属离子)光谱特性,然后重点介绍氧化物(包括石榴石和倍半氧化物)和Ⅱ-Ⅵ族化合物(主要是ZnS/ZnSe)两大类中红外激光陶瓷材料的制备与激光性能.最后,对这两大类中红外激光陶瓷中存在的问题进行了分析,并对其发展方向进行了展望.     

A Sm(III) Coordination Polymer Containing 2,5-Furandicarboxylic Acid: Crystal Structure and Recognition of Oxalate in Water

Crystallography Reports - The {[Sm2(FDC)2](FDC) · 10H2O}n complex, where H2FDC is a 2,5-furandicarboxylic acid, has been prepared by hydrothermal reaction and structurally characterized by...     

Unravelling the Role of Water in Ultrafast Excited-State Relaxation Dynamics within Nano-Architectures of Chlorophyll a

Water plays a pivotal role in structural stability of supramolecular pigment assemblies designed for natural light harvesting (for example, chlorosome antenna complex) as well as their artificial analogs. However, the dynamic role of water in the context of excite-state relaxation has not been explored till date, which we report here. Using femtosecond transient absorption spectroscopy, we investigate the excited-state dynamics of two types of nano-scale assemblies of chlorophyll a with different structural motifs, rod-shaped and micellar assemblies, that depend on the water content. We show how water participates in excess energy dissipation by vibrational cooling of the non-thermally populated Q_y band at different rates in different types of clusters but exhibits no polar solvation dynamics. For the micelles, we observe a bifurcation of stimulated emission line shape, whereas a positive-to-negative switching of differential absorption is observed for the rods; both these observations are correlated with their specific structural aspects. Density functional theory calculations reveal two possible stable ground state geometries of dimers, accounting for the bifurcation of line shape in micelles. Thus, our study elucidates water-mediated structure–function relationship within these pigment assemblies.     

超强频率梳激光场驱动下多光子共振谐波辐射的相位突变研究

本文从理论上研究了在双色频率梳激光场驱动下多光子谐波辐射光谱中的相位突变现象。我们利用Floquet理论非微扰地模拟了频率梳激光场与原子分子等量子系统的相互作用过程。谐波辐射信号是多光子偶极跃迁相干叠加的结果,通过调节频率梳激光场间的相对相位,可以相干地控制谐波辐射信号的强度。通过对谐波信号进行傅里叶变换,可以提取不同跃迁路径的相对相位信息。我们通过改变频率梳组激光场的强度和频率组分实现多光子跃迁频率,让其跨越共振跃迁频率时,谐波相位会发生突变。从而可以观测超强激光场驱动下量子系统共振跃迁频率的斯塔克能移。     

第三族金属氧化物离子对二氧化碳转化的红外光谱研究

本文利用红外光解离光谱研究了第三族金属氧化物离子对二氧化碳分子的转化机制. 研究表明，对于[ScO(CO₂)_n]⁺体系，在n≤4时，形成了溶剂化结构；在n=5时，形成了碳酸盐结构，实现了二氧化碳的转化. 对于[YO(CO₂)_n]⁺体系，需要4个二氧化碳分子就可以实现二氧化碳的转化. 而在[YO(CO₂)_n]⁺体系中，只发现了溶剂化结构，没有观察到碳酸盐结构. 理论计算表明，[YO(CO₂)_n]⁺体系拥有最小的溶剂化结构向碳酸盐结构转化能垒，[LaO(CO₂)_n]⁺体系拥有最大的溶剂化结构向碳酸盐结构转化能垒. 本文从分子水平揭示了不同金属氧化物离子对二氧化碳分子转化的影响规律.     

山东大学(威海)开展的核物理研究

综述了山东大学威海校区原子核物理研究团队在原子核精细谱学、核天体物理、探测器研制和高能核物理等方向开展的研究工作及最新进展；尤其重点介绍了$A\sim 110$核区原子核的形状共存和带交叉延迟，“订书机”和“雨伞”模式转动带，碳氮氧循环过程中关键核反应的测量进展，中子星参数化的状态方程及双中子星并合引力波研究，带电粒子探测器的设计与制作，相对论重离子碰撞物理中量子输运理论和高阶反常输运等研究工作，并展望了下一步的工作重点。     

Cytosine-5 methylation-directed construction of a Au nanoparticle-based nanosensor for simultaneous detection of multiple DNA methyltransferases at the single-molecule level

DNA methylation at cytosine/guanine dinucleotide islands (CpGIs) is the most prominent epigenetic modification in prokaryotic and eukaryotic genomes. DNA methyltransferases (MTases) are responsible for genomic methylation, and their aberrant activities are closely associated with various diseases including cancers. However, the specific and sensitive detection of multiple DNA MTases has remained a great challenge due to the specificity of the methylase substrate and the rareness of methylation-sensitive restriction endonuclease species. Here, we demonstrate for the first time the cytosine-5 methylation-directed construction of a Au nanoparticle (AuNP)-based nanosensor for simultaneous detection of multiple DNA MTases at the single-molecule level. We used the methyl-directed endonuclease GlaI to cleave the site-specific 5-methylcytosine (5-mC). In the presence of CpG and GpC MTases (i.e., M.SssI and M.CviPI), their hairpin substrates are methylated at cytosine-5 to form the catalytic substrates for GlaI, respectively, followed by simultaneous cleavage by GlaI to yield two capture probes. These two capture probes can hybridize with the Cy5/Cy3–signal probes which are assembled on the AuNPs, respectively, to form the double-stranded DNAs (dsDNAs). Each dsDNA with a guanine ribonucleotide can act as the catalytic substrate for ribonuclease (RNase HII), inducing recycling cleavage of signal probes to liberate large numbers of Cy5 and Cy3 molecules from the AuNPs. The released Cy5 and Cy3 molecules can be simply quantified by total internal reflection fluorescence (TIRF)-based single-molecule imaging for simultaneous measurement of M.SssI and M.CviPI MTase activities. This method exhibits good specificity and high sensitivity with a detection limit of 2.01 × 10⁻³ U mL⁻¹ for M.SssI MTase and 3.39 × 10⁻³ U mL⁻¹ for M.CviPI MTase, and it can be further applied for discriminating different kinds of DNA MTases, screening potential inhibitors, and measuring DNA MTase activities in human serum and cell lysate samples, holding great potential in biomedical research, clinical diagnosis, drug discovery and cancer therapeutics.

Cytosine-5 methylation-directed construction of Au nanoparticle-based nanosensors enables specific and sensitive detection of multiple DNA methyltransferases.     

Surface passivation in n-type silicon and its application in silicon drift detector

Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10¹⁵ cm^-3. When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.